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BLF6G22-180RN
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General description
180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Features
- Typical 2-carrier WCDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 30 V and an IDq of 1400 mA:
- Average output power = 40 W
- Power gain = 16.1 dB
- Efficiency = 25 %
- IMD3 = -37 dBc
- ACPR = -41 dBc
- Easy power control
- Integrated ESD protection
- Enhanced ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (2000 MHz to 2200 MHz)
- Internally matched for ease of use
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
Products/packages
| Type number | North American Type number | Ordering code (12NC) | Product status | Package | Packing | Marking | Chemical content | Leadfree conversion date |
|---|---|---|---|---|---|---|---|---|
| BLF6G22-180RN | 9340 627 33112 | Volume production | SOT502A
(LDMOST) | Blister pack | Standard Marking | BLF6G22-180RN
|
Pricing/ordering/availability
| Type number | Ordering code(12NC) | Indicative price/unit($) | Region | Distributor | In stock | Order quantity | Inventory date | Buy online | Samples |
|---|---|---|---|---|---|---|---|---|---|
| BLF6G22-180RN | 9340 627 33112 | not available |
Applications
- RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range.
Related applications
Power amplifier board
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