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BLL1214-250
General description
Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange.
Features
- High power gain
- Easy power control
- Excellent ruggedness
- Source on mounting base eliminates DC isolators, reducing common mode inductance.
Products/packages
| Type number | North American Type number | Ordering code (12NC) | Product status | Package | Packing | Marking | Chemical content | Leadfree conversion date |
|---|---|---|---|---|---|---|---|---|
| BLL1214-250 | BLL1214-250 | 9340 569 25112 | Volume production | SOT502A
(LDMOST) | Blister pack | Standard Marking | BLL1214-250
| Always Pb-free |
Pricing/ordering/availability
| Type number | Ordering code(12NC) | Indicative price/unit($) | Region | Distributor | In stock | Order quantity | Inventory date | Buy online | Samples |
|---|---|---|---|---|---|---|---|---|---|
| BLL1214-250 | 9340 569 25112 | NA | DIGI-KEY CORPORATION | 37 | 1/6/2009 | Buy online | Order samples | ||
| NA | MOUSER ELECTRONICS | 5 | 1/7/2009 | Buy online |
Design support
Support Documents
75015583;
Microwave Product Portfolio (2006-05-01)75016059;
Microwave product portfolio (2007-05-01)Parametrics/similar products
| Type number | Package | Description | POWER GAIN(dB) | Application | Efficiency(%) | LOAD POWER(W) | tp(us) | Frequency(MHz) | Operating voltage(VDC) | Duty cycle(%) |
|---|---|---|---|---|---|---|---|---|---|---|
| BLL1214-250 | SOT502A
(LDMOST) | L-Band Radar LDMOS RF POWER Transistor | 13 | L-band Radar | 50 | 250 | 1000 | 1200 - 1400 | 36 | 10 |
Similar products
BLL1214-250
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The similar products page includes products from the same catalog tree(s),
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