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BLS3135-20
General description
NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT422A) with the common base connected to the flange.
Features
- Suitable for short and medium pulse applications
- Internal input and output matching networks for an easy circuit design
- Emitter ballasting resistors improve ruggedness
- Gold metallization ensures excellent reliability
- Interdigitated emitter-base structure provides high emitter efficiency
- Multicell geometry improves power sharing and reduces thermal resistance.
Products/packages
| Type number | North American Type number | Ordering code (12NC) | Product status | Package | Packing | Marking | Chemical content | Leadfree conversion date |
|---|---|---|---|---|---|---|---|---|
| BLS3135-20 | BLS3135-20 TRAY | 9340 559 37114 | Volume production | SOT422A
(CDFM2) | Blister pack | Standard Marking | Not available
| Always Pb-free |
Pricing/ordering/availability
| Type number | Ordering code(12NC) | Indicative price/unit($) | Region | Distributor | In stock | Order quantity | Inventory date | Buy online | Samples |
|---|---|---|---|---|---|---|---|---|---|
| BLS3135-20 | 9340 559 37114 | not available |
Applications
- Common base class-C pulsed power amplifiers for radar applications in the 3.1 to 3.5 GHz range.
Design support
Support Documents
75015583;
Microwave Product Portfolio (2006-05-01)75016059;
Microwave product portfolio (2007-05-01)Parametrics/similar products
| Type number | Package | Description | POWER GAIN(dB) | Application | Efficiency(%) | LOAD POWER(W) | tp(us) | Frequency(MHz) | Operating voltage(VDC) | Duty cycle(%) |
|---|---|---|---|---|---|---|---|---|---|---|
| BLS3135-20 | SOT422A
(CDFM2) | S-Band Radar Bipolar RF POWER Transistor | 8 | S-band Radar | 40 | 20 | 100 | 3100 - 3500 | 40 | 10 |
Similar products
BLS3135-20
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