NXP Semiconductors


选择网站:

English
搜索

RF wideband transistors

Selection guide
RF宽带晶体管
pHEMT
晶体管宽带NPN(最高10 GHz)
晶体管宽带NPN(最高25 GHz)
晶体管宽带NPN(最高3.5 GHz)
晶体管宽带NPN(最高30 GHz)
晶体管宽带NPN(最高6 GHz)
晶体管宽带NPN(最高8 GHz)
晶体管宽带PNP(最高3.5 GHz)
晶体管宽带PNP(最高6 GHz)
便携式设备用UHF功率晶体管

Now in its 7th generation, our range delivers operating frequencies from 100 MHz to 20 GHz

Classified according to transition frequency and noise / gain performance, our wideband transistors offer a host of package, process and specifications options. The range is now up to its 7th generation, delivering operating frequencies from 100 MHz to 20 GHz.

Key benefits

  • Broad portfolio (1st - 7th generation)
  • Short leadtimes
  • Smallest packages
  • Volume delivery

Key features

  • Very high gain
  • Low noise
  • Low current consumption
  • Easier heatsinking - via emitter lead
  • Wide range of package options including SOT343F, a small, 4-pin, flat-lead plastic SMD package

Key applications

  • Mobile phone ODM/CEM designs
  • Cordless phones
  • Tire pressure measuring systems
  • Tuners
  • GPS receivers; Satellite LNB, STB, multi-switch box

Descriptive summary

The fT-ITC curve represents Transition Frequency (fTT) characteristics as a function of collector current (ITC) for the six generations of RF wideband transistors. A group of transistors having the same collector current (ITC) & similar transition frequencies (fTT) represents a curve. The curve number matches products in the table, detailing their RF characteristics.

Wideband transistors line-up per frequency: