RF PIN diodes

Ideal for a wide range of mobile communications and RF applications

Operating up to 3 GHz with high-voltage handling capabilities, NXP's PIN diodes are ideal for a wide range of mobile communications and RF applications. Their low loss and low distortion levels improve battery life and quality in mobile phones and cordless phones.

Key benefits

• Short leadtimes
• Broad portfolio
• Unrivalled performance

Key features

• Very low series inductance
• Low forward resistance (R_D) and diode capacitance (C_d)
• Operate up to 3 GHz
• Ultra-small package options
• High isolation, low distortion, low insertion loss

Key applications

• Signal switching in satellite accessories e.g. multiswitch boxes, LNBs
• Band switch for TV tuners
• Antenna switching for cordless phones, Bluetooth^TM, WLAN and telemetry modules
• Transmit-receive switches in mobile communications
• RF attenuators for car radios and base stations

Descriptive summary

Together with outstanding RF performance, the diodes simplify design-in because of their extremely low forward resistance, diode capacitance and series inductance. These inherent qualities are largely due to a state-of-the-art planar diffusion process. Supplied in a range of highly compact package options - including SOD523 and the leadless, environmentally-friendly SOD882 (MCD) - significant board space savings can be made, helping designers create smaller, lighter end-products.

Application as SPDT switch in RF generic front-end:

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